| PART |
Description |
Maker |
| W7MG1M32SVT90BNI |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
White Electronic Designs Corporation
|
| W7MG21M32SVB90BNI |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
White Electronic Design...
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| IBM0418A41BLAB |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM
|
IBM Corporation
|
| M58LW128B150N6T M58LW128B150N1T M58LW128A150N6E M5 |
8M X 16 FLASH 3V PROM, 150 ns, PDSO56
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位Mb x16Mb的X32号，统一座，突发3V电源闪存
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位8Mb x16Mb的X32号，统一座，突发3V电源闪存
RECEPTACLE HOUSING, 5WAY
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| M29W640DT M29W640DT90ZA6T M29W640DB M29W640DB70N1E |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LW064D110N6P |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29DW640D |
64 Mbit (8Mb x8 or 4Mb x16 / Multiple Bank / Page / Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| WS1M32V-17G3I WS1M32V-17G3IA WS1M32V-20G3I |
1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM3.3模块
1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM.3模块
|
Unisonic Technologies Co., Ltd.
Electronic Theatre Controls, Inc.
Microsemi, Corp.
|
| WEDF1M32B-905 WEDF1M32B-705 WEDF1M32B-XHX5 WEDF1M3 |
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间90ns
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间70ns
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间120ns
Flash MCP 闪存MCP
|
White Electronic Designs Corporation
|
| N08L163WC1C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
